RESISTANCE EFFECT OF ELECTRIC DOUBLE LAYER ON LIQUID FLOW IN MICROCHANNEL

Poisson-Boltzrnann equation for EDL (electric double layer) and Navier-Stokes equation for liquid flows were numerically solved to investigate resistance effect of electric double layer on liquid flow in microchannel. The dimension analysis indicates that the resistance effect of electric double layer can be estimated by an electric resistance number, which is proportional to the square of the liquid dielectric constant and the solid surface zeta potential, and inverse-proportional to the liquid dynamic viscosity, electric conductivity and the square of the channel width. An "electric current density balancing" (ECDB) condition was proposed to evaluate the flow-induced streaming potential, instead of conventional "electric current balancing" (ECB) condition which may induce spurious local backflow in neighborhood of the solid wall of the microchannel. The numerical results of the flow rate loss ratio and velocity profile are also given to demonstrate the resistance effect of electric double layer in microchannel.     

存在填隙幂律流体时圆球间切向作用的近似解

在Reynolds润滑理论的基础上，导出了存在填隙幂律流体时，两刚性圆球有相对切向运动时流体压力的近似方程，并进一步求得了圆球所受阻力矩的近似积分表达式，给出了问题的数值解。结果发现幂流体的幂指数、颗粒间最小间隙以及颗粒的大小都是流体压力和颗粒间切向阻力的重要因素。与Godman等人的牛顿流体下圆球平行于平面缓慢运动时圆球所受阻力以及阻力矩的渐近解作的比较表明，本文的数值解优于渐近解。     

Structural first failure times under non-Gaussian stochastic behavior

An analytical moment-based method for calculating structural first failure times under non-Gaussian stochastic behavior is proposed.In the method,a power series that constants can be obtained from response moments (skewness,kurtosis,etc.) is used firstly to map a non-Gaussian structural response into a standard Gaussian process,then mean up-crossing rates,mean clump size and the initial passage probability of a critical barrier level by the original structural response are estimated,and finally,the formula for calculating first failure times is established on the assumption that corrected up-crossing rates are independent.An analysis of a nonlinear single-degree-of-freedom dynamical system excited by a Gaussian model of load not only demonstrates the usage of the proposed method but also shows the accuracy and efficiency of the proposed method by comparisons between the present method and other methods such as Monte Carlo simulation and the traditional Ganssian model.     

偏压电场对压电板中Lamb波相速度的影响

本文研究了偏压电场作用下,Lamb波在压电板中的传播行为，首先给出了偏压电场作用时压电板中的应力场及电位移场，然后通过求解含初应力及初电位移的小幅波动问题的耦合方程，分别给出了Lamb波的对称模态和反对称模态的相速度方程，以典型的PZT－5H压电陶瓷板为例进行了数值计算,并讨论了偏压电场对Lamb波相速度及频散曲线的影响，结果表明，偏压电场可以显著地改变Lamb波的传播速度，借此可使声波器件获得延时效果。     

横观各向同性压电材料中裂纹问题的边界元法

采用Somigiliana公式给出了三维横观各向同性压电材料中的非渗漏裂纹问题的一般解和超奇异积分方程，其中未知函数为裂纹面上的位移间断和电势间断．在此基础上，使用有限部积分和边界元结合的方法，建立了超奇异积分方程的数值求解方法，并给出了一些典型数值算例的应力强度因子和电位移强度因子的数值结果，结果令人满意．     

THREE-DIMENSIONAL ANALYSIS OF A MAGNETOELECTROELASTIC HALF-SPACE UNDER AXISYMMETRIC TEMPERATURE LOADING 1)

考虑力-电-磁-热等多场耦合作用, 基于线性理论给出了磁-电-弹性半空间在表面轴对称温度载荷作用下的热-磁-电-弹性分析, 并得到了问题的解析解. 利用Hankel 积分变换法求解了磁-电-弹性材料中的热传导及控制方程, 讨论了在磁-电-弹性半空间在边界表面上作用局部热载荷时的混合边值问题, 利用积分变换和积分方程技术, 通过在边界表面上施加应力自由及磁-电开路条件, 推导得到了磁-电-弹性半空间中位移、电势及磁势的积分形式的表达式. 获得了磁-电-弹性半空间中温度场的解析表达式并且给出了应力, 电位移和磁通量的解析解. 数值计算结果表明温度载荷对磁-电-弹性场的分布有显著影响. 当温度载荷作用的圆域半径增大时, 最大正应力发生的位置会远离半无限大体的边界; 反之当温度载荷作用的圆域半径减小时, 最大应力发生的位置会靠近半无限大体的边界. 电场和磁场在温度载荷作用的圆域内在边界表面附近有明显的强化, 而磁-电-弹性场强化区域的强化程度跟温度载荷的大小和作用区域大小相关. 本研究的相关结果对智能材料和结构在热载荷作用下的设计和制造具有指导意义.     

光栅局域调控二维光电探测器

近年来,二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注.特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质,使其在下一代光电子器件领域具有广阔的应用前景.本文将主要介绍二维材料在光电探测领域上的应用优势,概述光电探测器的基本原理和参数指标,重点探讨光栅效应与传统光电导效应的区别,以及提高光增益和光响应度的原因和特性,进而回顾光栅局域调控在光电探测器中的最新进展及应用,最后总结该类光电探测器面临的问题及对未来方向的展望.     

Theory of variational calculation with a scaling correct moment functional to solve the electronic schrödinger equation directly for ground state one‐electron density and electronic energy

The reduction of the electronic Schrodinger equation or its calculating algorithm from 4N‐dimensions to a nonlinear, approximate density functional of a three spatial dimension one‐electron density for an N electron system which is tractable in practice, is a long‐desired goal in electronic structure calculation. In a seminal work, Parr et al. (Phys. Rev. A 1997, 55, 1792) suggested a well behaving density functional in power series with respect to density scaling within the orbital‐free framework for kinetic and repulsion energy of electrons. The updated literature on this subject is listed, reviewed, and summarized. Using this series with some modifications, a good density functional approximation is analyzed and solved via the Lagrange multiplier device. (We call the attention that the introduction of a Lagrangian multiplier to ensure normalization is a new element in this part of the related, general theory.) Its relation to Hartree–Fock (HF) and Kohn–Sham (KS) formalism is also analyzed for the goal to replace all the analytical Gaussian based two and four center integrals (∫g_i( r ₁)g_k( r ₂)rd r ₁d r ₂, etc.) to estimate electron‐electron interactions with cheaper numerical integration. The KS method needs the numerical integration anyway for correlation estimation. © 2012 Wiley Periodicals, Inc.     

Ultrasonic cavitation at liquid/solid interface in a thin Ga–In liquid layer with free surface

Cavitation in thin layer of liquid metal has potential applications in chemical reaction, soldering, extraction, and therapeutic equipment. In this work, the cavitation characteristics and acoustic pressure of a thin liquid Ga–In alloy were studied by high speed photography, numerical simulation, and bubble dynamics calculation. A self-made ultrasonic system with a TC4 sonotrode, was operated at a frequency of 20 kHz and a max output power of 1000 W during the cavitation recording experiment. The pressure field characteristic inside the thin liquid layer and its influence on the intensity, types, dimensions, and life cycles of cavitation bubbles and on the cavitation evolution process against experimental parameters were systematically studied. The results showed that acoustic pressure inside the thin liquid layer presented alternating positive and negative characteristics within 1 acoustic period (T). Cavitation bubbles nucleated and grew during the negative-pressure stage and shrank and collapsed during the positive-pressure stage. A high bubble growth speed of 16.8 m/s was obtained and evidenced by bubble dynamics calculation. The maximum absolute pressure was obtained at the bottom of the thin liquid layer and resulted in the strongest cavitation. Cavitation was divided into violent and weak stages. The violent cavitation stage lasted several hundreds of acoustic periods and had higher bubble intensity than the weak cavitation stage. Cavitation cloud preferentially appeared during the violent cavitation stage and had a life of several acoustic periods. Tiny cavitation bubbles with life cycles shorter than 1 T dominated the cavitation field. High cavitation intensities were observed at high ultrasonication power and when Q235B alloy was used because such conditions lead to high amplitudes on the substrate and further high acoustic pressure inside the liquid.     

Anisotropic exciton Stark shift in hemispherical quantum dots

The exciton Stark shift and polarization in hemispherical quantum dots(HQDs) each as a function of strength and orientation of applied electric field are theoretically investigated by an exact diagonalization method. A highly anisotropic Stark redshift of exciton energy is found. As the electric field is rotated from Voigt to Faraday geometry, the redshift of exciton energy monotonically decreases. This is because the asymmetric geometric shape of the hemispherical quantum dot restrains the displacement of the wave function to the higher orbital state in response to electric field along Faraday geometry. A redshift of hole energy is found all the time while a transition of electron energy from this redshift to a blueshift is found as the field is rotated from Voigt to Faraday geometry. Taking advantage of the diminishing of Stark effect along Faraday geometry, the hemispherical shapes can be used to improve significantly the radiative recombination efficiency of the polar optoelectronic devices if the strong internal polarized electric field is along Faraday geometry.